LAB PUBLICATIONS

LAB PUBLICATIONS

• Chemical Potential of Inhomogeneous Single Layer Graphene,
  E. M. Hajaj, O. Shtempluk, A. Razin, V. Kochetkov, and Y. E. Yaish, Physical Review B, 88, 045128 (2013).
• Evolution of Nickel Silicide Intrusions in Silicon Nanowires during Thermal Cycling,
  A. Katsman, M. Beregovsky, and Y. E. Yaish, Journal of Applied Physics, 113, 084305 (2013).
• Gate-Induced Modification of Water Adsorption on the Gate Dielectric of Carbon Nanotube Field-Effect Transistors,
  Y. Pascal-Levy, E. Shifman, M. Pal-Chowdhury, E. Hajaj, O.Shtempluk, A. Razin, V. Kochetkov, and Y. E. Yaish, ChemPhysChem, 13, 4202 (2012).
• Diffusion Formation of Nickel Silicide Contacts in SiNWs,
  M. Beregovsky, A. Katsman, E. M. Hajaj, and Y. E. Yaish, Solid State Electronics, 80, 110 (2012).
• Water Assisted Gate Induced Temporal Surface Charge Distribution Probed by Electrostatic Force Microscopy,
  Y. Pascal-Levy, E. Shifman, I. Sivan, I. Kalifa, M. Pal-Chowdhury, O. Shtempluk, A. Razin, Kochetkov, and Y. E. Yaish, Journal of Applied Physics, 112, 084329 (2012).
• Water Assisted Mobile Charge Induced Screening and Origin of Hysteresis in Carbon Nanotube Field-Effect Transistors,
  Y. Pascal-Levy, E. Shifman, M. Pal-Chowdhury, I. Kalifa, T.Rabkin, O. Shtempluk, A. Razin, V. Kochetkov, and Y. E. Yaish, Physical Review B, 86, 115444 (2012).
• Simulations of nanosensors based on single walled carbon nanotubes,
  P. Pine, Y. E. Yaish, J. Adler, The Journal of Physics: Conference Series, 402, 012002 (2012).
• High Performance Horizontal Gate All Around Silicon nanowire Field Effect Transistor,
  O. Shirak, O. Shtempluk, V. Kochetkov, G. Bahir, and Y. E. Yaish, Nanotechnology, 23, 395202 (2012).
• The affect of boundary conditions on the vibrations of armchair, zigzag and chiral single walled carbon nanotubes,
  P. Pine, Y. E. Yaish, J. Adler, Journal of Applied Physics, 110, 124311 (2011).
• From Contact to Diffusion Controlled Growth of Nickel Silicides in Silicon Nanowires,
  A. Katsman, Y. E. Yaish, M. Beregovsky, Defect and Diffusion Forum, 323-325, 427 (2011).
• Thermal oscillations of structurally distinct single-walled carbon nanotubes,
  P. Pine, Y. E. Yaish, J. Adler, Physical Review B, 83, 155410 (2011).
• Diffusion Instability and Tapering of Nickel Silicide Intrusions in Silicon Nanowires,
  A. Katsman, M. Beregovsky, Y. E. Yaish, MRS Proceedings, Boston, USA (2011).
• Simulation and Vibrational Analysis of Thermal Oscillations of Single Walled Carbon Nanotubes,
  P. Pine, Y. E. Yaish, J. Adler, Physical Review B, 83, 155410 (2011).
• Kinetics of Nickel Silicides Growth in Silicon Nanowires: From Linear to Square Root Growth,
  Y. E. Yaish, M. Beregovsky, A. Katsman, Journal of Applied Physics, 109, 094303 (2011).
• Accurate carrier-type determination of Non-Homogenously Doped Diamond,
  N. Yom-Tov, C. Saguy, A. Bolker, R. Kalish, Y. E. Yaish, Journal of Applied Physics, 108 (4), 043711 (2010).
• Surface diffusion controlled of Nickel Silicides in Silicon Nanowires,
  A. Katsman, Y. E. Yaish, E. Rabkin, and M. Beregovsky, Journal of Electronic material, 39, 365 (2010).
• Visualizing Nanodiamond and Nanotubes with AViz,
  J. Adler, Y. Gershon, T. Mutat, A. Sorkin, E. Warszawski, R. Kalish, and Y. E. Yaish, Computer Simulation Studies in Condensed-Matter Physics XIX, 123, 56–60 (2009).